| Abstract: |
The global transition toward renewable energy has intensified research into high-performance semiconductor materials for photovoltaic (PV) applications. This study investigates five primary semiconductor materials monocrystalline silicon (c-Si), perovskite, gallium arsenide (GaAs), cadmium telluride (CdTe), and copper indium gallium selenide (CIGS) evaluating their photovoltaic parameters, bandgap properties, stability, and commercial viability. The objectives are to comparatively analyze the power conversion efficiency (PCE) of these materials under AM1.5 standard test conditions and to assess their suitability for next-generation solar cell deployment. A systematic secondary data analysis methodology was adopted, drawing from NREL efficiency tables (Versions 63 and 64), peer-reviewed journals (2019–2024), and verified institutional databases. Hypothesis posits that perovskite-based and tandem architectures outperform conventional silicon in PCE under laboratory conditions but underperform in long-term stability. Results confirm that single-junction c-Si records 26.7% PCE, perovskite reaches 26.1%, GaAs achieves 29.1%, CdTe records 22.4%, and CIGS attains 23.35–23.64%. Discussion aligns comparative findings with material-specific loss mechanisms. The study concludes that tandem configurations, particularly perovskite/silicon, offer the most promising pathway toward exceeding the Shockley–Queisser limit. |
